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DDR5-5600 | ECC Registered | 3D-TSV 16-Hi | 1.1V | 288-pin | High Density
The Samsung DDR5 128GB RDIMM utilizes advanced 3D-TSV (Through Silicon Via) 16-Hi stacking technology to achieve 128GB in a single module. Running at DDR5-5600 with ECC Registered support, it enables massive memory capacity for AI training, in-memory databases, and high-performance computing.
Capacity
128GB
Type
DDR5 RDIMM (ECC Registered)
Speed
DDR5-5600 (5600 MT/s)
Full hardware specifications for the Samsung DDR5 128GB RDIMM
Capacity
128GB
Type
DDR5 RDIMM (ECC Registered)
Speed
DDR5-5600 (5600 MT/s)
Voltage
1.1V
CAS Latency
3D-TSV 16-Hi
Pins
288-pin
PCIe 4.0 x4 | NVMe 1.4 | 6900 MB/s Read | 4000 MB/s Write | 1M IOPS | U.2/M.2
3.84TB
PCIe 5.0 x4 | NVMe 2.0 | 13000 MB/s Read | 6600 MB/s Write | 2.5M IOPS | U.2/E3.S
15.36TB
PCIe 5.0 x4 | NVMe 2.0 | 13000 MB/s Read | 7000 MB/s Write | 2.5M IOPS | E3.S
7.68TB
SATA 6Gb/s | 2.5" | 560 MB/s Read | 530 MB/s Write | Read-Intensive | Enterprise
3.84TB